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CETC NEW ENERGY


Sprint into the second quarter, maximize the "struggle value" (Part 3)

2025-06-19


On June 19th, a horizontal silicon carbide chemical vapor deposition equipment was successfully delivered to the customer's site, marking a new breakthrough in the single champion cultivation plan for coating equipment and an important step for the company to actively expand into new market areas.

On June 19, a horizontal silicon carbide chemical vapor deposition equipment was successfully delivered to the customer's site, marking a new breakthrough in the cultivation plan for the coating equipment champion, and also an important step for the company to actively expand into new market areas.

 

 

This equipment is the company's third-generation horizontal silicon carbide chemical vapor deposition equipment developed with a brand-new design concept, with both structural design and process technology independently developed by the company. It uses a high-precision temperature control system that can precisely regulate the temperature difference of the graphite substrate within 1°C to ensure process stability; CFD numerical simulation technology is used to optimize the equipment structure and process parameters, effectively improving production quality and efficiency. After multiple process optimizations and adjustments, it successfully achieves a coating product purity of ≥99.9999%, a silicon carbide coating thickness of 100μm ± 10%, and key technical indicators such as main crystal type, crystal orientation, and hardness reach a domestic leading level.

Looking ahead, the company will take this as an opportunity to continuously deepen technological innovation, steadily improve product performance and service quality, further enhance scientific research strength and market influence, and provide stronger technical support and equipment assurance for the development of China's semiconductor industry.

Author: Zhou Shihao; Proofreader: Shi Yujie; Editor: Nie Chunyan

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